feb.1999 mitsubishi transistor modules QM150DY-3H high power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor controllers, nc equipment, welders QM150DY-3H ? i c collector current ........................ 150a ? v cex collector-emitter voltage ......... 1400v ? h fe dc current gain............................. 100 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 113 70 21.5 25 25 f 6.5 m6 5.5 14 615 6 b 2 x b 1 x 93 c 2 e 1 e 2 c 1 12 b 2 e 2 e 1 b 1 6 15 6 90 tab #110, t=0.5 17 8 17 8 17 31 7 37.5 b 2 x c 2 e 1 b 1 x e 2 b 2 e 2 c 1 e 1 b 1 label 5.5
feb.1999 absolute maximum ratings (tj=25 c, unless otherwise noted) electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 100 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =3v v eb =3v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m6 mounting screw m6 typical value ratings 1400 1400 1400 7 150 150 1500 16 1500 C40~+150 C40~+125 3000 1.96~2.94 20~30 1.96~2.94 20~30 650 unit v v v v a a w a a c c v nm kgcm nm kgcm g symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1400v, v eb =3v v cb =1400v, emitter open v eb =7v i c =150a, i b =3a Ci c =150a (diode forward voltage) i c =150a, v ce =5v v cc =800v, i c =150a, i b1 =Ci b2 =3a transistor part (per 1/2 module) diode part (per 1/2 module) conductive grease applied (per 1/2 module) typ. max. 15 15 400 3.0 3.5 1.8 3.0 20 3.0 0.08 0.35 0.025 mitsubishi transistor modules QM150DY-3H high power switching use insulated type
feb.1999 1 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 2.2 2.4 2.6 2.8 3.0 3.2 v ce =5.0v t j =25? 400 100 0 01 23 4 5 200 300 t j =25? i b =10a i b =0.6a i b =1.5a i b =5a i b =3a 3 10 7 5 4 3 2 2 10 7 5 4 3 2 1 10 23457 2 10 23457 3 10 2 v ce =10v v ce =5.0v t j =25? t j =125? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 1 10 23457 2 10 23457 3 10 t j =25? t j =125? i b =3a v be(sat) v ce(sat) 0 1 2 3 4 5 7 0 10 345 2 3457 1 10 ? 10 2 t j =25? t j =125? i c =200a i c =100a i c =150a 1 10 7 5 4 3 2 0 10 7 5 4 3 23457 2 10 234 1 10 57 3 10 3 2 t j =25? t j =125? i b1 =? b2 =3a v cc =800v t on t s t f performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM150DY-3H high power switching use insulated type
feb.1999 3 10 2 10 1 10 0 10 0 10 1 10 0 10 ? 10 ? 10 ? 10 3 10 2 10 0 10 1 10 1 10 2 10 3 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 400 0 0 400 800 1200 2000 300 200 100 350 250 150 50 1600 t j =125? i b2 =?a 7 0 10 3 2 1 10 7 5 4 345 2 3457 1 10 3 2 0 10 7 5 4 3 23 t j =25? t j =125? v cc =800v i b1 =3a i c =150a t s t f 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 42 200? 1ms dc 500? 50? 7 5 3 2 7 5 3 2 7 5 3 2 0.02 0.10 0 7 5 3 2 4 4 4 4 0.04 0.06 0.08 0 0.5 1 1.5 2 7 5 3 2 7 5 3 2 7 5 3 2 t j =25? t j =125? t c =25? non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM150DY-3H high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 0 10 1 10 ? 10 ? 10 ? 10 0 10 3 10 2 10 1 10 0 10 0 10 3 10 2 10 1 10 2 10 1 10 0 10 ? 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 1000 500 1500 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 v cc =800v i b1 =? b2 =3a i rr q rr t rr t j =25? t j =125? 5 7 5 3 2 7 5 3 2 7 5 3 2 0.08 0.16 0.24 0.32 0.40 0 3 2 7 5 3 2 4 4 4 4 4 7 t rr ( m s) i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM150DY-3H high power switching use insulated type z th (jCc) ( c/ w)
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